Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on PEN eBook October 2025, Next-Gen AI Data Centers, and 22kW Servo Drive! Here’s a RoundUp of this week’s ...

MIT Spin-Off Vertical Semiconductor Accelerates Vertical GaN Development for Efficient AI Data Center. Vertical Semiconductor, a recent spin-off from MIT, has secured $11 million in seed funding led ...

SiC MOSFETs are revolutionizing motor control by minimizing energy losses, enhancing system reliability, and boosting thermal robustness. Electric motors are becoming increasingly common as more ...

Once limited to niche applications such as fast chargers, GaN now powers data centers, solar inverters, and e-mobility systems. Gallium nitride has moved from niche to mainstream in just a few years.

The objective is to have the process flow installed for 300 mm from the epitaxy to the fully processed wafer. Gallium nitride is still maturing for its applicability in evolving high-power ...

Flex recently introduced a globally manufactured, fully integrated platform designed specifically for gigawatt-scale AI and HPC data centers. Flex recently introduced a globally manufactured, fully ...

SiC conversion boosts efficiency, power density, and thermal performance through optimized gate drive, thermal design, and EMI-aware system integration. Converting power electronic platforms from ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

The evolution of batteries reflects technological progress and the ever-increasing demands of modern society. In this short list (see also an image in Figure 1), we examine the different steps that ...

In recent years, the European Union (EU) has implemented a range of strategic policies and financial initiatives aimed at fostering high-tech investments. These efforts are designed to strengthen ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...