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ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R trade-off, delivering high reliability protection for a wide range ...

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Abstract: This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in ...

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KYOTO, Japan, Oct. 23, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high ...

Abstract: This brief presents an impulse radio ultra-wideband (IR-UWB) transmitter (TX) designed for miniature multi-channel neural recording platforms in freely moving laboratory animals. We ...

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