A US collaboration is making tremendous strides towards the commercialisation of AlN/GaN HEMTs with an AlN buffer, grown on ...

Vertical Semiconductor, a spin-out from the Massachusetts Institute of Technology (MIT), has announced $11 million in seed ...

Microtest Group, a European manufacturer of test equipment, has launched two turnkey platforms for power device ...

Infineon has launched the CoolSiC MOSFETs 1400V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link ...

Vacuum+Fab Solutions will be showing its vacuum technology and gas abatement systems at Semicon Europa, from November 18 to ...

Ams Osram and Nichia have expanded their long-standing IP collaboration with comprehensive cross-license agreement covering ...

The UK Semiconductor Centre has moved into its next phase of mobilisation with the announcement of its newly formed Interim ...

Power Integrations (PI) has outlined the benefits of its PowiGaN GaN technology for next-generation AI data centres. The ...

The breakthrough, by a research team led by Seiichiro Izawa of the Materials and Structures Laboratory at Science Tokyo, was ...

Rohm has released a new white paper detailing its solutions for AI data centres based on NVIDIA's 800V DC architecture. As ...

The European Parliament has approved more than €900,000 euros in EU aid to help former employees of GaN chipmaker BelGaN in ...

Cambridge GaN Devices (CGD) has announced that it is working with GlobalFoundries (GF) to strengthens CGD's fabless strategy, ...