New design tailored to semiconductor wafer shapes Streamlines pressure inspection in the wafer bonding processTokyo, June 8, ...

Wafer-to-wafer hybrid bonding process capable of achieving a 200-nanometre copper interconnect pitch demonstrated.

Wafer bonding underpins the integration of diverse semiconductor materials into unified platforms, enabling three-dimensional stacking and heterogeneous assembly of components with disparate lattice ...

Resonac is looking for development partners to establish a new debonding process, as well as to market the new temporary bonding film. In the front-end and back-end processes of advanced ...

A recent technical paper titled “Factors determining bond wave speed in wafer bonding” was published by researcher at Yokohama National University, Tokyo Electron Kyushu Limited and ANVOS Analytics.

Hybrid bonding has been in production for several years, with mature flows capable of delivering robust yields using 10µm interconnects. At that scale, processes can tolerate hundreds of nanometers of ...

CEA-Leti has announced a major milestone in the evolution of 3D integration for high-performance computing (HPC), advanced ...

Chiplets depend strongly on 2.5D and 3D packaging. In 2.5D systems dies are placed side-by-side on an interposer, while 3D ...

Imec and EV Group (EVG) demonstrate a highly yielding wafer-to-wafer hybrid bonding technology at 200nm Cu interconnect pad ...