Researchers in Taiwan have discovered that in polysilicon production the crucible angular speed affects the oxygen concentration near the crucible wall, which in turn affects the wafers’ mechanical ...

Device level SiC wafers require a systematic process including single crystal growth, wire cutting, lapping or grinding, and chemical mechanical polishing. SiC wafers have important application value ...

Research from the Chin-Yi University of Technology in Taiwan revealed a novel heater design in the Czochralski silicon crystal growth process that can control and decrease oxygen concentration without ...

Wolfspeed, Inc. (NYSE: WOLF), a global leader in silicon carbide technology, today announced a significant industry milestone with the successful production of a single crystal 300mm (12-inch) silicon ...

A single chemical additive applied during perovskite film deposition helped lift a perovskite-silicon tandem solar cell to a ...