A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Conventional electronics based on silicon are approaching their limits in terms of performance and scalability. In recent years, engineers have thus been trying to introduce alternative designs that ...
A technical paper titled “Reconfigurable Si Field-Effect Transistors With Symmetric On-States Enabling Adaptive Complementary and Combinational Logic” was published by researchers at TU Vienna and ...
As transistors are scaled to smaller dimensions, their static power increases. Combining two-dimensional (2D) channel materials with complementary metal–oxide–semiconductor (CMOS) logic architectures ...
Researchers unveil 3D transistors using 2D semiconductors, enabling energy-efficient, high-performance electronics with unprecedented miniaturization. (Nanowerk News) In a significant advancement for ...
Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...
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